Etch process for CD reduction of arc material

Details Etch process for CD reduction of arc material Etch process for CD reduction of arc material

2008-04-22

2008-04-22

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S694000, C438S736000, C257SE21026, C257SE21039

Reexamination Certificate

active

07361588

ABSTRACT:
A method of reducing critical dimensions of a feature in a anti-reflective coating layer structure can utilize a polymerizing agent. The anti-reflective coating structure can be utilized to form various integrated circuit structures. The anti-reflective coating can be utilized to form gate stacks comprised of polysilicon and a dielectric layer, conductive lines, or other IC structure. The polymerizing agent can include carbon, hydrogen and fluorine.

REFERENCES:
patent: 5264076 (1993-11-01), Cuthbert et al.
patent: 5773199 (1998-06-01), Linliu et al.
patent: 5837428 (1998-11-01), Huang et al.
patent: 5858621 (1999-01-01), Yu et al.
patent: 6028001 (2000-02-01), Shin
patent: 6080678 (2000-06-01), Yim
patent: 6096659 (2000-08-01), Gardner et al.
patent: 6136679 (2000-10-01), Yu et al.
patent: 6156629 (2000-12-01), Tao et al.
patent: 6218292 (2001-04-01), Foote
patent: 6221776 (2001-04-01), Smith
patent: 6297170 (2001-10-01), Gabriel et al.
patent: 6252922 (2002-03-01), Kim
patent: 6365529 (2002-04-01), Hussein et al.
patent: 6410421 (2002-06-01), Ghandehari et al.
patent: 6579808 (2003-06-01), Cho et al.
patent: 6774032 (2004-08-01), Park
patent: 6955961 (2005-10-01), Chung
patent: 2004/0065956 (2004-04-01), Teh et al.
patent: 2004/0157381 (2004-08-01), Seo
patent: 2005/0056823 (2005-03-01), Allen et al.
patent: 1 460 677 (2004-09-01), None
International Search Report and Written Opinion for Application No. PCT/US2006/010231, mailed Aug. 8, 2006, received Sep. 1, 2006, 7 pages.

Affiliated with

Also associated with

Rating

Etch process for CD reduction of arc material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etch process for CD reduction of arc material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etch process for CD reduction of arc material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2798573