Etch of silicon nitride selective to silicon and silicon...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S724000, C438S743000, C438S744000

Reexamination Certificate

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07060629

ABSTRACT:
A method for etching silicon nitride selective to silicon dioxide and silicon (polycrystalline silicon or monocrystalline silicon) comprises the use of oxygen along with an additional etchant of either CHF3or CH2F2. Flow rates, power, and pressure settings are specified.

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“Highly Selective Etching of Silicon Nitride Over Silicon and Silicon Dioxide”, J. Vac. Sci. Technol. A 17(6), Nov./Dec. 1999, pp. 3179-3184.

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