Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-06-13
2006-06-13
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S724000, C438S743000, C438S744000
Reexamination Certificate
active
07060629
ABSTRACT:
A method for etching silicon nitride selective to silicon dioxide and silicon (polycrystalline silicon or monocrystalline silicon) comprises the use of oxygen along with an additional etchant of either CHF3or CH2F2. Flow rates, power, and pressure settings are specified.
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“Highly Selective Etching of Silicon Nitride Over Silicon and Silicon Dioxide”, J. Vac. Sci. Technol. A 17(6), Nov./Dec. 1999, pp. 3179-3184.
Martin Kevin D.
Norton Nadine G.
Tran Binh X.
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