Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-02-27
2008-05-06
Ahmed, Shamim (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C216S076000, C438S706000, C438S710000, C438S718000, C438S736000
Reexamination Certificate
active
07368394
ABSTRACT:
Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a sidewall passivation management scheme. In one embodiment, sidewall passivations are managed by selectively forming an oxidation passivation layer on the sidewall and/or bottom of etched layers. In another embodiment, sidewall passivation is managed by periodically clearing the overburden redeposition layer to preserve an even and uniform passivation layer thereon. The even and uniform passivation allows the features with high aspect ratios to be incrementally etched in a manner that pertains a desired depth and vertical profile of critical dimension in both high and low feature density regions on the substrate without generating defects and/or overetching the underneath layers.
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Jin Guangxiang
Leucke Uwe
Liu Wei
Shen Meihua
Wang Xikun
Ahmed Shamim
Applied Materials Inc.
George Patricia A
Patterson & Sheridan LLP
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