Cleaning and liquid contact with solids – Processes – Including regeneration – purification – recovery or separation...
Patent
1996-10-04
1999-02-02
Green, Anthony
Cleaning and liquid contact with solids
Processes
Including regeneration, purification, recovery or separation...
134 11, 134 13, 438704, 438725, 438906, 216 67, 216109, H01L 213065, H01L 21306, C23G 102
Patent
active
058659005
ABSTRACT:
A method for removing a metal-fluoropolymer residue from an integrated circuit structure within an integrated circuit. There is first provided an integrated circuit having formed therein a metal-fluoropolymer residue. The metal-fluoropolymer residue is formed from a first plasma etch method employing a fluorocarbon containing etchant gas composition within the presence of a conductor metal layer within the integrated circuit. The metal-fluoropolymer residue is then exposed to a second plasma etch method employing a chlorine containing etchant gas composition to form from the metal-fluoropolymer residue a chlorine containing plasma treated metal-fluoropolymer residue. Finally, the chlorine containing plasma treated metal-fluoropolymer residue is removed from the integrated circuit through a stripping method sequentially employing an aqueous acid solution followed by an organic solvent.
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Lee Chiarn-Lung
Shu Huai-Jen
Yen Ying-Tzu
Ackerman Stephen B.
Green Anthony
Saile George O.
Szecsy Alek P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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