Etch mask and method of forming a magnetic random access...

Details Etch mask and method of forming a magnetic random access... Etch mask and method of forming a magnetic random access...

2007-12-11

2007-12-11

Sarkar, Asok Kumar (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21038

Reexamination Certificate

active

11426768

ABSTRACT:
A method for forming an MRAM bit is described that includes providing a covering layer over an integrated circuit structure. In one embodiment, the covering layer includes tantalum. A first mask layer is formed over the covering layer followed by a second mask layer. The first mask layer and second mask layer are etchable by the same etching process. The first and second mask layer are etched. Etch residue is removed from the first and second mask layers. The first mask layer is then selectively removed and the second mask layer remains.

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