Etch-ending point measuring method for wet-etch process

Semiconductor device manufacturing: process – Including control responsive to sensed condition

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205645, 216 84, H01L 21311

Patent

active

056226365

ABSTRACT:
A wet-etch method which determines a desired etch-ending point includes the steps of providing an etchant solution in a bath, perform a wet-etch process by dipping a material to be etched in the bath, measuring a PH variation value of the etchant solution during the wet-etch process, calculating a thickness variation value of the material by using the measured PH variation value, and stopping the wet-etch process when the thickness variation value reaches a preset value.

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patent: 5364510 (1994-11-01), Carpio
patent: 5500073 (1995-05-01), Barbee et al.
patent: 5503707 (1995-09-01), Maung et al.

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