Semiconductor device manufacturing: process – Including control responsive to sensed condition
Patent
1996-05-07
1997-04-22
Kunemund, Robert
Semiconductor device manufacturing: process
Including control responsive to sensed condition
205645, 216 84, H01L 21311
Patent
active
056226365
ABSTRACT:
A wet-etch method which determines a desired etch-ending point includes the steps of providing an etchant solution in a bath, perform a wet-etch process by dipping a material to be etched in the bath, measuring a PH variation value of the etchant solution during the wet-etch process, calculating a thickness variation value of the material by using the measured PH variation value, and stopping the wet-etch process when the thickness variation value reaches a preset value.
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Choi Sang J.
Han Suk B.
Huh Yun J.
Adjodha Michael E.
Kunemund Robert
LG Semicon Co. Ltd.
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