Etch-ending point measuring method for vapor etch process

Details Etch-ending point measuring method for vapor etch process Etch-ending point measuring method for vapor etch process

1996-07-12

1998-07-21

Martin, Roland

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

216 61, 438 14, 438 17, G01R 3100, H01L 21268

Patent

active

057830991

ABSTRACT:
A method for determining an etch-ending point using a vapor etch apparatus having a chamber is disclosed including the steps of providing a vapor-state etchant in the chamber, inserting a material to be etched in the chamber and etching the material by the etchant, measuring an ion current intensity of a by-product generated during the vapor etch process, calculating a thickness variation value of the material by using the ion current intensity value, and stopping the vapor etch process when the thickness variation value reaches a preset value.

REFERENCES:
patent: 4358338 (1982-11-01), Downey et al.
patent: 4362596 (1982-12-01), Desilets et al.
patent: 4872944 (1989-10-01), Rufin et al.
patent: 5294280 (1994-03-01), Wakabayashi et al.

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