Etch bias monitoring technique

Details Etch bias monitoring technique Etch bias monitoring technique

1986-03-24

1988-01-05

Bashore, S. Leon

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156652, H01L 21306

Patent

active

047174455

ABSTRACT:
A method for determining the etch bias of a particular semiconductor device feature layer material in a given etch process employing a hard mask reference material that changes very little or not at all during the etch under examination, and using a cross-sectional examination of the critical dimensions to determine the bias. Silicon dioxide would be a suitable hard mask material for a plasma etch bias study, for example. Preferably, a scanning electron microscope would determine the etch bias in one microphotograph. The need for optically taking two or more separate measurements to optically determine the etch bias, and the possiblility for incorporating error between measurements, is eliminated. In addition, the contribution of photoresist erosion to the etch bias of the device feature layer may be independently determined.

REFERENCES:
patent: 4447290 (1984-05-01), Matthews
patent: 4512847 (1985-04-01), Brunsch et al.

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