Etch back of interconnect dielectrics

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S631000, C438S690000, C438S761000

Reexamination Certificate

active

06780756

ABSTRACT:

BACKGROUND OF THE INVENTION
This invention relates to an etch back of the interconnect dielectric to improve electrical and mechanical reliability.


REFERENCES:
patent: 6258709 (2001-07-01), McDaniel
patent: 6331481 (2001-12-01), Stamper et al.
patent: 6372632 (2002-04-01), Yu et al.
patent: 2002/0108929 (2002-08-01), Ho et al.
patent: 2002/0177322 (2002-11-01), Li et al.
patent: 2003/0107069 (2003-06-01), Takao
patent: 2003/0116439 (2003-06-01), Seo et al.
patent: 2003/0211750 (2003-11-01), Kim et al.

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