ESD tolerated SOI device

Details ESD tolerated SOI device ESD tolerated SOI device

1997-08-20

1998-10-27

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257532, H01L 2701

Patent

active

058281061

ABSTRACT:
A semiconductor-on-insulator (SOI) type semiconductor device with an enhanced electrostatic discharge (ESD) tolerance having a semiconductor layer on an insulating support substrate, comprising a pair of voltage supply lines formed on the semiconductor layer, a pair of low resistivity semiconductor regions connected to said pair of source supplying lines and disposed within the layer, and a dielectric region disposed between said pair of low resistivity semiconductor regions; wherein said pair of low resistivity semiconductor regions form a capacitor.

REFERENCES:
patent: 4989057 (1991-01-01), Lu
patent: 5155573 (1992-10-01), Abe et al.
patent: 5202751 (1993-04-01), Horiguchi
patent: 5378919 (1995-01-01), Ochiai
patent: 5499207 (1996-03-01), Mihi et al.
Patent Abstracts of Japan, vol. 7, No. 58, Mar. 10, 1983.
Patent Abstracts of Japan, vol. 8, No. 200, Sep. 13, 1984.
Patent Abstracts of Japan, vol. 9, No. 39, Feb. 19, 1985.
Patent Abstracts of Japan, vol. 12, No. 375, Oct. 7, 1988.
Patent Abstracts of Japan, vol. 14, No. 268, Jun. 11, 1990.
Patent Abstracts of Japan, vol. 15, No. 506, Dec. 20, 1991.
Patent Abstracts of Japan, vol. 17, No. 568, Oct. 14, 1993.
Patent Abstracts of Japan, vol. 17, No. 672, Dec. 10, 1993.

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