Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-10
2008-07-08
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000
Reexamination Certificate
active
07397089
ABSTRACT:
According to an exemplary embodiment, an ESD protection structure situated in a semiconductor die includes a FET including a gate and first and second active regions, where the gate includes at least one gate finger, and where the at least one gate finger is situated between the first and second active regions. The ESD protection structure further includes at least one contact-via chain connected to the first active region, where the at least one contact-via chain includes a contact connected to a via. The at least one contact-via chain forms a ballast resistor for increased ESD current distribution uniformity. The contact is connected to the via by a first metal segment situated in a first interconnect metal layer of a die. The at least one contact-via chain is connected between the first active region and a second metal segment situated in a second interconnect metal layer of the die.
REFERENCES:
patent: 6034433 (2000-03-01), Beatty
patent: 6898062 (2005-05-01), Russ et al.
patent: 2001/0045670 (2001-11-01), Nojiri
Cheng Yuhua
Zhang Jiong
Farjami & Farjami LLP
Menz Douglas M
Skyworks Solutions Inc.
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