Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-29
2005-03-29
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06873017
ABSTRACT:
Device60in FIG.3has junctions86each with a lateral portion90and a second portion92extending upward toward the surface12from the lateral portion90. The lateral portions90, as illustrated in FIG.3, are more or less formed along a plane parallel with the surface12. The upwardly extending portions92include characteristic curved edges of the diffusion fronts which are associated with the planar process. With the regions80and82each having relatively high net dopant concentrations of different conductivity types, each lateral junction portion90includes a relatively large sub region96which extends more deeply into the layer10. When compared to other portions of the junctions86, the subregions96are characterized by a relatively low breakdown voltage so that ESD current is initially directed vertically rather than laterally.
REFERENCES:
patent: 5559352 (1996-09-01), Hsue et al.
patent: 5777368 (1998-07-01), Wu et al.
patent: 6071775 (2000-06-01), Choi et al.
patent: 6420770 (2002-07-01), Xiang et al.
patent: 6444511 (2002-09-01), Wu et al.
U.S. Appl. No. 09/781,430, filed Aug. 2002, Hsu et al.
Cai Jun
Park Steven
Sugerman Alvin
Fairchild Semiconductor Corporation
Farahani Dana
FitzGerald Esq. Thomas R.
Pham Long
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