Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-01-22
1995-03-28
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, H01L 3300
Patent
active
054019974
ABSTRACT:
An improved Electrostatic Discharge (ESD) protection device for use in the electrostatic discharge testing of an integrated circuit (IC). In accordance with the invention, a p-n junction is formed beneath a polysilicon resistor, with a metal oxide layer separating the resistor and the p-n junction. The p-n junction is formed by positioning a semiconductor well having a first polarity between the metal oxide and a semiconductor substrate having a second polarity. The invention reduces the electrostatic potential across the metal oxide layer, which could otherwise result in damage to the metal oxide during ESD testing of the IC. In a preferred embodiment, the invention includes a switch, such as a transistor, between the well and ground, for allowing the well to float freely during normal circuit operation (to reduce noise) and for fixing the well at a fixed potential during ESD testing.
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patent: 4697199 (1987-09-01), De Graaff et al.
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patent: 5017985 (1991-05-01), Lin
"A CMOS VLSI ESD Input Protection Device, DIFIDW," Chong Ming Lin, et al., Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1984, pp. 202-209.
Integrated Device Technology Inc.
James Andrew J.
Meier Stephen D.
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