Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-09-11
1994-03-01
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, 257356, 257361, 257378, 257653, 361 91, 361100, 361101, H01L 2702, H01L 2906, H01L 2978
Patent
active
052910512
ABSTRACT:
A circuit utilizable for protecting an integrated circuit feature from electrostatic discharge is disclosed. A first bipolar transistor has its emitter connected to the IC feature and its collector connected to ground. A second bipolar transistor has its emitter connected to the IC feature and its collector connected to its base and to the base of the first bipolar transistor. A field effect transistor has its gate and drain connected to the IC feature and its body connected to its source and to the collector and base of the second bipolar transistor and to the base of the first bipolar transistor. A diode has its cathode connected to the body and the source of the field effect transistor and to the collector and base of the second bipolar transistor and to the base of the first bipolar transistor.
REFERENCES:
patent: 4633283 (1986-12-01), Avery
patent: 4819047 (1989-04-01), Gilfeather et al.
Hoang Tuong H.
Izadinia Mansour
National Semiconductor Corporation
Ngo Ngan
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