Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-10-10
2011-11-01
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S655000, C257S133000, C257S119000, C438S135000, C438S208000, C438S223000
Reexamination Certificate
active
08049278
ABSTRACT:
An ESD device includes a low doped well connected to a first contact and a diffusion area connected to a second contact. A substrate between the low doped well and the diffusion area has a dopant polarity that is opposite a dopant polarity of the low doped well and the diffusion area. A distance between the low doped well and the diffusion area determines a triggering voltage of the ESD device. A depletion region is formed between the low doped well and the substrate when a reverse bias voltage is applied to the ESD device. A current discharging path is formed between the first contact and the second contact when the depletion region comes in to contact with the diffusion area. The substrate is biased by a connection to the second contact. Alternatively, an additional diffusion area with the same dopant polarity, connected to a third contact, biases the substrate.
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Broadcom Corporation
Henry Caleb
Pham Thanh V
Sterne Kessler Goldstein & Fox P.L.L.C.
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