Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Patent
1997-08-29
1999-09-07
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
257174, 257366, H01L 2974, H01L 31111, H01L 2976, H01L 2994
Patent
active
059490942
ABSTRACT:
An ESD protected semiconductor circuit and the ESD protection circuit. The protected circuit includes a terminal, a semiconductor device coupled to the terminal and an ESD protection circuit. The ESD protection circuit includes a substrate of a first conductivity type and has a surface. A first well of conductivity type opposite to the first conductivity type is disposed within the substrate and extends to the surface. A second well of the first conductivity type is disposed within the first well and is spaced from the substrate and extending to the surface. A third region of the opposite conductivity type is disposed within the second well and is spaced from the first well and extending to the surface. At least one of the substrate or the third region is coupled to the terminal.
REFERENCES:
patent: 4595941 (1986-06-01), Avery
patent: 4631567 (1986-12-01), Kokado et al.
patent: 4633283 (1986-12-01), Avery
patent: 4943835 (1990-07-01), Yakushiji et al.
patent: 5001537 (1991-03-01), Colman et al.
patent: 5440151 (1995-08-01), Crevel et al.
patent: 5485024 (1996-01-01), Reay
patent: 5663860 (1997-09-01), Swonger
patent: 5808342 (1998-09-01), Chen et al.
Brady III Wade James
Donaldson Richard L.
Ngo Ngan V.
Texas Instruments Incorporated
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