ESD protection for high density DRAMs using triple-well technolo

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection

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Details

257174, 257366, H01L 2974, H01L 31111, H01L 2976, H01L 2994

Patent

active

059490942

ABSTRACT:
An ESD protected semiconductor circuit and the ESD protection circuit. The protected circuit includes a terminal, a semiconductor device coupled to the terminal and an ESD protection circuit. The ESD protection circuit includes a substrate of a first conductivity type and has a surface. A first well of conductivity type opposite to the first conductivity type is disposed within the substrate and extends to the surface. A second well of the first conductivity type is disposed within the first well and is spaced from the substrate and extending to the surface. A third region of the opposite conductivity type is disposed within the second well and is spaced from the first well and extending to the surface. At least one of the substrate or the third region is coupled to the terminal.

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patent: 5485024 (1996-01-01), Reay
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patent: 5808342 (1998-09-01), Chen et al.

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