ESD protection element for CMOS integrated circuit

Details ESD protection element for CMOS integrated circuit ESD protection element for CMOS integrated circuit

1992-08-21

1994-01-25

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, 257769, 257770, H01L 2362, H01L 2348, H01L 2352

Patent

active

052818411

ABSTRACT:
A semiconductor device (1) includes a circuit having at least one transistor Tr1 and first and second electrodes (30) and (32). A protection element (20) having a device region (21) forming a pn junction (23) within the semiconductor body (10) and covered by an electrode layer (21c) is connected via an electrode (27) to one (30) of the first and second electrodes for providing a conductive path between the first and second electrodes (30) and (32) when a voltage above a threshold voltage is applied to the first electrode (30). The electrode layer (21c) forms with at least part (21a) of the device region (21) a potential barrier (B) for causing the conductive path provided by the protection element (20) to pass from the electrode (27) to the pn junction (23) at least partly via the device region (21) of the protection element (20) thereby increasing the resistance of the path to the pn junction (23).

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