Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-18
2010-11-23
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
07838939
ABSTRACT:
According to one embodiment of the present invention, an ESD protection element for use in an electrical circuit is provided, including a plurality of diodes which are connected in series with one another and which are formed in a contiguous active area, wherein the ESD protection element has a fin structure.
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D. A. Buchannan et al., “Fabrication of midgap metal gates compatible with ultrathin dielectrics,” IBM-Research, Thomas J. Watson Research Center, Route 134, Yorktown Heights, New York 10598. Received Oct. 14, 1997; accepted for publication Jul. 22, 1998.
Fulde Michael
Gossner Harald
Russ Christian
Dickstein & Shapiro LLP
Infineon - Technologies AG
Nguyen Dao H
Nguyen Tram H
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