Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-06
2007-03-06
Doan, Theresa T. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S361000, C257S371000
Reexamination Certificate
active
11250508
ABSTRACT:
To control the uneven distribution of current density and reduce the area of an ESD protection circuit in an SCR-type ESD protection device. An N-type well11, and P-type wells12aand12bdisposed oppositely and adjacent to the N-type well11, with the N-type well11interposed between them, are formed on the surface of a semiconductor substrate. A high concentration N-type region15ais formed on the surface of the P-type well12a, a high concentration N-type region15bis formed on the surface of the P-type well12b, and each of them is grounded. Further, a high concentration P-type region14ais formed, oppositely to the high concentration N-type region15a, on the surface of the N-type well11, and a high concentration P-type region14bis formed, oppositely to the high concentration N-type region15b, on the surface of the N-type well11, and each of them is connected to an I/O pad. A high concentration N-type region13is formed on the N-type well11, being interposed between the high concentration P-type region14aand the high concentration P-type region14b, and connected to a trigger device. A surge loaded on the I/O pad is released to the ground terminal via the SCR structures on the both sides.
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Doan Theresa T.
NEC Electronics Corporation
Sughrue & Mion, PLLC
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