Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-23
2006-05-23
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S173000, C257S361000, C257S487000, C257S490000, C257S494000, C257S495000, C257S546000
Reexamination Certificate
active
07049663
ABSTRACT:
An electrostatic discharge protection device with high voltage and negative voltage tolerance is provided. The electrostatic discharge protection device comprises: a first type substrate; a first type well inside the first type substrate, the first type well being floating; a second type well inside the first type substrate, the second type well separating the first type well from the first type substrate, the second type well being coupled to a first voltage line; a second type first doped region inside the first type well and coupled to a second voltage line; a second type second doped region inside the first type well and coupled to the pad; and an isolation structure between the second type first doped region and the second type second doped region.
REFERENCES:
patent: 6501137 (2002-12-01), Yu et al.
patent: 2005/0133870 (2005-06-01), Manna et al.
Huynh Andy
Jiang Chyun IP Office
Sunplus Technology Co,Ltd.
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