ESD protection device for high voltage CMOS applications

Details ESD protection device for high voltage CMOS applications ESD protection device for high voltage CMOS applications

1995-03-01

1997-02-18

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257361, 257363, H01L 2362

Patent

active

056043694

ABSTRACT:
A protection device, circuit, and a method of forming the same. A field oxide drain extended nMOS (FODENMOS) transistor (10) is located in an epitaxial region (16). The FODENMOS transistor (10) comprises a field oxide region (36a) that extends from the source diffused regions (22) to over a portion of the extended drain region (20). A drain diffused region (24) is located within the extended drain region (20). A gate electrode (40) may be located above the field oxide region (36a) if desired. Accordingly, there is no thin oxide interface between the gate electrode (40) and the extended drain region (20) that can lead to low ESD protection.

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patent: 4602267 (1986-07-01), Shirato
patent: 4734752 (1988-03-01), Liu et al.
patent: 4786956 (1988-11-01), Puar
patent: 5158899 (1992-10-01), Yamagata
patent: 5208474 (1993-05-01), Yamagata et al.
patent: 5225702 (1993-07-01), Chatterjee
patent: 5406105 (1995-04-01), Lee

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