ESD protection circuits using Zener diodes

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257360, 257363, 257481, 257551, 257546, 361 56, 361 58, 361100, H01L 2362, H02H 900

Patent

active

055005462

ABSTRACT:
An electrostatic discharge protection circuit 11 coupled between an input pad 12 and operational circuitry 20 includes a primary clamp circuit 14 coupled to input pad 12, and a current limit circuit 16 coupled to primary clamp circuit 14. Primary clamp circuit 14 clamps an electrostatic discharge voltage to a first voltage value. Operational circuitry 20, susceptible to damage due to an electrostatic discharge, is coupled to current limit circuit 16 and a zener diode 30 is coupled between current limit circuit 16 and a ground potential. Zener diode 30 has a cathode terminal coupled to current limit circuit 16 and an anode terminal coupled to ground potential. Zener diode 30 further clamps a voltage across operational circuitry 20 to a second voltage which is less than 10 V, thereby protecting operational circuitry 20 from damage due to electrostatic discharge.

REFERENCES:
patent: 4896243 (1990-01-01), Chatterjee et al.
patent: 5012317 (1991-04-01), Rountre
patent: 5060037 (1991-10-01), Rountre
patent: 5077591 (1991-12-01), Chen et al.
patent: 5223737 (1993-06-01), Canclini
patent: 5225702 (1993-07-01), Chatterjee
patent: 5268588 (1993-12-01), Marum
patent: 5290724 (1994-03-01), Leach

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