Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-22
2005-02-22
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S356000, C257S358000, C361S056000
Reexamination Certificate
active
06858901
ABSTRACT:
An ESD protection circuit with high substrate-triggering efficiency. The circuit comprises a multi-finger-type device having a plurality of finger gates below which a parasitic BJT is formed, a plurality of finger sources, each of which is an emitter of one parasitic BJT, and at least one finger drain coupled to a pad, a plurality of voltage drop elements, each of which is coupled between one of the finger sources and a power line to detect a transient current flowing through one of the finger gates, and a plurality of feedback circuits, each of which is coupled between a base and an emitter respectively of a first and second parasitic BJT, and activates the first BJT to bypass ESD current during an ESD event.
REFERENCES:
patent: 20020033507 (2002-03-01), Verhaege et al.
Hsu Kuo-Chun
Ker Ming-Dou
Dickey Thomas L
Taiwan Semiconductor Manufacturing Company
Thomas Kayden Horstemeyer & Risley
Tran Minhloan
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