ESD protection circuit utilizing floating lateral clamp diodes

Details ESD protection circuit utilizing floating lateral clamp diodes ESD protection circuit utilizing floating lateral clamp diodes

2005-12-20

2005-12-20

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C361S056000

Reexamination Certificate

active

06977420

ABSTRACT:
A semiconductor chip is ESD protected, in part, by utilizing floating lateral clamp diodes. Unlike conventional clamp diodes, which are based upon parasitic bipolar devices associated with large MOS transistors, the floating lateral clamp diodes utilize a well formed in the substrate as the cathode, and a plurality of regions of the opposite conductivity type which are formed in the well as the anode.

REFERENCES:
patent: 5239440 (1993-08-01), Merrill
patent: 5515225 (1996-05-01), Gens et al.
patent: 5744842 (1998-04-01), Keer
patent: 5770886 (1998-06-01), Rao et al.
patent: 6086627 (2000-07-01), Bass, Jr. et al.

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