Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-06
2007-11-06
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S362000, C257S363000, C257S355000, C257SE29014, C257SE29327, C257SE29066
Reexamination Certificate
active
11152264
ABSTRACT:
An electrostatic discharge (ESD) protection circuit for dissipating an ESD current from a first pad to a second pad during an ESD event. The ESD protection circuit includes a first bipolar transistor having an emitter coupled to the first pad. A second bipolar transistor having a base and a collector coupled to the second pad is used. Zero or more bipolar transistors are sequentially coupled between the first and second bipolar transistors in a base-to-emitter manner. A collector of the first bipolar transistor and the sequentially coupled transistors is connected to a base of a subsequently coupled bipolar transistor for helping to turn on the first, second and sequentially coupled bipolar transistors to provide a current path from the first pad to the second pad during an ESD event.
REFERENCES:
patent: 2006/0050451 (2006-03-01), Jen-Chou
Erdem Fazli
K & L Gates LLP
Purvis Sue A.
Taiwan Semiconductor Manufacturing Co. Ltd.
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