Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-04-29
1998-11-17
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257126, 257128, 257173, 257174, 361 57, 361 91, 361100, H01L 2362, H01L 2974, H02N 300, H02N 320
Patent
active
058380434
ABSTRACT:
A circuit for protecting a bonding pad of a semiconductor device from ESD voltages is located under the pad to permit the space otherwise used for a protection circuit to be used for normal operating components. The protection circuit has a compact layout that provides maximum ability to handle an ESD current within this limited space. The semiconductor structure for the circuit has separate parts for two SCR circuits, one for each polarity of ESD current. Each SCR circuit comprises two symmetrical SCR structures.
REFERENCES:
patent: 4733285 (1988-03-01), Ishioka et al.
patent: 4803541 (1989-02-01), Kouda
patent: 4806999 (1989-02-01), Strauss
patent: 5182220 (1993-01-01), Ker et al.
patent: 5359211 (1994-10-01), Croft
patent: 5473169 (1995-12-01), Ker et al.
Clark Jhihan B.
Saadat Mahshid D.
United Microelectronics Corp.
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