ESD protection circuit for dual 3V/5V supply devices using singl

Details ESD protection circuit for dual 3V/5V supply devices using singl ESD protection circuit for dual 3V/5V supply devices using singl

1995-08-16

2000-06-20

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257360, 257361, 257363, H01L 2362

Patent

active

060780835

ABSTRACT:
An ESD protection circuit for dual 3V/5V supply devices. ESD protection circuit 10 comprises a switching element 12 connected between a bond pad 14 and primary protection device 16. Primary protection device 16 comprises MOS circuitry designed for 3V operation that suffers from oxide reliability problems when 5V signals are applied directly. Switching element 12 separates the primary protection device 16 from 5V signals which may appear at bond pad 14.

REFERENCES:
patent: 4786956 (1988-11-01), Pivar
patent: 4952994 (1990-08-01), Lin
patent: 5208474 (1993-05-01), Yamagata et al.
patent: 5270565 (1993-12-01), Lee et al.
patent: 5285069 (1994-02-01), Kaibara et al.
Ajith Amerasekera, S. Ping Kwok, Jerold Seitchik; "Current Transport Modeling in an Amorphous Silicon Antifuse Structure"; Apr., 1993, Materials Research Society Symp. Proc. vol. 297, pp. 999-1004.

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