ESD protection circuit

Details ESD protection circuit ESD protection circuit

2005-05-24

2005-05-24

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S403000, C257S414000, C257S408000, C257S409000, C257S548000, C257S549000

Reexamination Certificate

active

06897536

ABSTRACT:
An ESD-protection device includes a gate electrode formed on a substrate; a first diffusion region of a first conductivity type formed in the substrate at a first side of the gate electrode, a second diffusion region of the first conductivity type formed in the substrate at a second side of the gate electrode, and a third diffusion region of a second conductivity type formed in the substrate underneath the second diffusion region in contact with the second diffusion region. Thereby, the impurity concentration level of the third diffusion region is set to be larger than the impurity concentration level of the region of the substrate located at the same depth right underneath the gate electrode.

REFERENCES:
patent: 6198142 (2001-03-01), Chau et al.
patent: 6218226 (2001-04-01), Lin et al.
patent: 6388288 (2002-05-01), Vasanth et al.
patent: 6426535 (2002-07-01), Takeuchi et al.
patent: 6452232 (2002-09-01), Adan
patent: 6674127 (2004-01-01), Kotani
patent: 436903 (2001-05-01), None

Affiliated with

Also associated with

Rating

ESD protection circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with ESD protection circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and ESD protection circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3396927