ESD protection cell with active pwell resistance control

Details ESD protection cell with active pwell resistance control ESD protection cell with active pwell resistance control

2007-09-11

2007-09-11

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S356000, C257S357000, C257S360000, C257S361000, C257SE29242, C257SE29255, C257SE29263, C361S091500, C438S202000

Reexamination Certificate

active

11503693

ABSTRACT:
In an NMOS device, the turn-on voltage or the triggering voltage is reduced by adding an NBL connected to an n-sinker and contacted through an n+ region, which is connected to a bias voltage. The bias voltage may be provided by the drain contact or by a separate bias voltage.

REFERENCES:
patent: 5416351 (1995-05-01), Ito et al.
patent: 6242793 (2001-06-01), Colombo et al.
patent: 2005/0145945 (2005-07-01), Zdebel et al.
patent: 2005/0275027 (2005-12-01), Mallikarjunaswamy

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