Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-04-13
1996-08-13
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257359, 257363, H01L 2362
Patent
active
055459102
ABSTRACT:
An ESD protection device is disclosed having a first region of a first conductivity type. A second region, which is heavily doped, of a second conductivity type is disposed in the first region. The second region extends from the surface of the first region a first depth. A third region, which is heavily doped, of the second conductivity type, is also disposed in the first region such that the third region is separated from the second region by a portion of the surface of the first region. The third region extends from the surface of the first region a second depth less than the first depth of the second region. An insulating region is grown on a portion of the surface of the first region between the second and third regions. Furthermore, a resistive conducting region is disposed on the second region and the insulating region. A portion of the resistive conducting region extends beyond the second region for receiving an input signal.
REFERENCES:
patent: 4503448 (1985-03-01), Miyasaka
patent: 5218222 (1993-06-01), Roberts
Ngo Ngan V.
Winbond Electronics Corp.
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