ESD induced artifact reduction design for a thin film...

Details ESD induced artifact reduction design for a thin film... ESD induced artifact reduction design for a thin film...

2011-03-08

2011-03-08

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S142000, C438S149000, C257S072000

Reexamination Certificate

active

07902004

ABSTRACT:
A method is provided for fabricating an image sensor array in a manner that reduces the potential for defects resulting from electrostatic discharge events during fabrication of the image sensor array. The method includes: forming at least one pixel over a substrate, the pixel including a switching transistor and a photo-sensitive cell; and forming a dielectric interlayer over the pixel. A key step in the method of the present invention is depositing a first conductive layer over the dielectric interlayer. After the first conductive layer is formed, the image sensor array is well protected from ESD events because the first conductive layer spreads out any charge induced by tribo-electric charging events that may occur during subsequent fabrication processing steps, thereby reducing the potential for localized damage to the switching transistors upon the occurrence of ESD events.

REFERENCES:
patent: 4782380 (1988-11-01), Shankar et al.
patent: 6372665 (2002-04-01), Watanabe et al.
patent: 2007/0057260 (2007-03-01), Lee
patent: 2008/0241980 (2008-10-01), Kobayashi et al.

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