Error detection/correction and fault detection/recovery – Pulse or data error handling – Digital data error correction
Reexamination Certificate
2007-09-04
2007-09-04
Lamarre, Guy J. (Department: 2112)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Digital data error correction
Reexamination Certificate
active
10694761
ABSTRACT:
An embedded DRAM ECC architecture for purging data errors. The embedded DRAM ECC architecture is based upon a two-dimensional linear parity scheme, and includes a plurality of memory blocks and a parity block. Each memory block includes additional columns for storing row parity bits, and the parity block stores column parity bits. A row parity circuit coupled in parallel to an existing local databus of each memory checks the parity of the local databus bits against a row parity bit during a refresh or read operation to identify parity failure. Identification of the incorrect bit of the word is achieved by iteratively transferring the data of the local databus of each memory block onto an existing global databus, and checking the parity across the global databus with a column parity circuit. When global databus parity failure is detected, all bits of the global databus are inverted to purge the incorrect bit from the memory block via the local databus.
REFERENCES:
patent: 4183463 (1980-01-01), Kemmetmueller
patent: 4456980 (1984-06-01), Yamada et al.
patent: 4679196 (1987-07-01), Tsujimoto
patent: 4688219 (1987-08-01), Takemae
patent: 4747080 (1988-05-01), Yamada et al.
patent: 4768193 (1988-08-01), Takemae
patent: 4901320 (1990-02-01), Sawada et al.
patent: 4942575 (1990-07-01), Earnshaw et al.
patent: 5127014 (1992-06-01), Raynham
patent: 5134616 (1992-07-01), Barth, Jr. et al.
patent: 6125466 (2000-09-01), Close et al.
patent: 6185718 (2001-02-01), Dell et al.
patent: 6233717 (2001-05-01), Choi
patent: 6353910 (2002-03-01), Carnevale et al.
P. Mazumder, “An On-Chip ECC Circuit for Correcting Soft Errors in DRAM's with Trench Capicitors”, IEEE Journal of Solid-State Circuits, vol. 27, No. 11, Nov. 1992, pp. 1623-1633.
ISSCC 83, Friday, Feb. 28, 1983, Imperial Ballroom A, 11:45am., Session XVI: 256K DRAMs, “FAM 16,6: Submicron VLSI Memory Circuits”, T. Mano, J. Yamada, J. Inoue, S. Nakajima, 1983 IEEE International Solid-State Circuits Conference.
ISSCC 84, Wednesday, Feb. 22, 1984, Continental Ballrooms 6-9, 4:30pm, Session VIII A: 256K 1Mb DRAMs I, “WPM 8A.5: A Submicron VLSI Memory with a 4b-at-a-Time Built-in ECC Circuit”, J. Yamada, T. Mano, J. Inoue, S. Nakajima, T. Matsuda, 1984 IEEE International Solid-State Circuits Conference.
Borden Ladner Gervais LLP
Hung Shin
Lamarre Guy J.
Mosaid Technologies Incorporated
LandOfFree
Error correction scheme for memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Error correction scheme for memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Error correction scheme for memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3797543