Static information storage and retrieval – Read/write circuit – Erase
Patent
1997-01-23
1998-02-24
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Erase
36518529, 365226, G11C 700
Patent
active
057217076
ABSTRACT:
An erase voltage control circuit for an electrically erasable non-volatile memory cell having a control electrode and a first electrode. The circuit includes negative voltage generator means for generating a negative erase voltage to be supplied to the control electrode of the memory cell and means for electrically coupling the first electrode to a voltage supply. The circuit further includes control means for selectively deactivating the negative voltage generator means when a current supplied by the voltage supply to the first electrode of the memory cell reaches a predetermined value.
REFERENCES:
patent: 5231602 (1993-07-01), Radjy et al.
patent: 5365121 (1994-11-01), Morton et al.
Cane Marcello
Dallabora Marco
Villa Corrado
Carlson David V.
Nelms David C.
Niranjan F.
SGS--Thomson Microelectronics S.r.l.
LandOfFree
Erase voltage control circuit for an electrically erasable non-v does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Erase voltage control circuit for an electrically erasable non-v, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Erase voltage control circuit for an electrically erasable non-v will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1879044