Static information storage and retrieval – Floating gate – Particular biasing
Patent
1998-09-10
2000-04-11
Nelms, David
Static information storage and retrieval
Floating gate
Particular biasing
36518529, 36518519, 36518526, 36518527, 36518533, G11C 1604
Patent
active
060494840
ABSTRACT:
A method to erase data from a flash EEPROM is disclosed. Electrical charges trapped in the tunneling oxide of a flash EEPROM are eliminated to maintain proper separation of the programmed threshold voltage and the erased threshold voltage after extended programming and erasing cycles. The method to erase a flash EEPROM cell begins by erasing the flash EEPROM cell by first applying a high positive voltage pulse to the source of the EEPROM cell. Simultaneously, a ground reference potential is applied to the semiconductor substrate and the control gate. At this same time the drain is floating. Floating the source and drain and applying the ground reference potential to the semiconductor substrate then detraps the flash EEPROM cell. At the same time, a relatively large negative voltage pulse is applied to the control gate.
REFERENCES:
patent: 5231602 (1993-07-01), Radjy et al.
patent: 5243559 (1993-09-01), Murai
patent: 5361235 (1994-11-01), Kodama
patent: 5414669 (1995-05-01), Tedrow et al.
patent: 5457652 (1995-10-01), Brahmbhatt
patent: 5481494 (1996-01-01), Tang et al.
patent: 5485423 (1996-01-01), Tang et al.
patent: 5491657 (1996-02-01), Haddad et al.
patent: 5521866 (1996-05-01), Akaogi
patent: 5903499 (1999-05-01), Peng et al.
Ho Ming-Chou
Lee Jian-Hsing
Peng Kuo-Reay
Yeh Juang-Ke
Ackerman Stephen B.
Knowles Billy
Nelms David
Saile George O.
Taiwan Semiconductor Manufacturing Company
LandOfFree
Erase method to improve flash EEPROM endurance by combining high does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Erase method to improve flash EEPROM endurance by combining high, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Erase method to improve flash EEPROM endurance by combining high will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1181574