Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-10
2007-04-10
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21683
Reexamination Certificate
active
10973894
ABSTRACT:
Provided is an erasable and programmable read only memory (EPROM) device in which a plasma enhanced oxide (PEOX) film covers an upper surface of a floating gate in a single poly one time programmable (OTP) cell and a method of manufacturing a semiconductor device having the same. The semiconductor device comprises a substrate having an OTP cell region, on which a floating gate is formed for making an OTP cell transistor, and a main chip region, on which a gate of a transistor is formed. A PEOX film is formed on the OTP cell region and the main chip region. The PEOX film covers the floating gate in a close state and covers the gate by a predetermined distance. A silicon oxy nitride (SiON) film is interposed between the gate and the PEOX film in the main chip region.
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patent: 6258667 (2001-07-01), Huang
patent: 6420752 (2002-07-01), Ngo et al.
patent: 2002/0008275 (2002-01-01), Nakagawa
patent: 02-231899 (2002-08-01), None
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Lee Ki-Hyung
Yoo Seung-Han
Dickey Thomas L.
F. Chau & Associates
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