Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-06
2005-09-06
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S009000
Reexamination Certificate
active
06940127
ABSTRACT:
Equipment for a communication system has a semiconductor device formed by integrating a Schottky diode, a MOSFET, a capacitor, and an inductor in a SiC substrate. The SiC substrate has a first multilayer portion and a second multilayer portion provided upwardly in this order. The first multilayer portion is composed of δ-doped layers each containing an n-type impurity (nitrogen) at a high concentration and undoped layers which are alternately stacked. The second multilayer portion is composed of δ-doped layers each containing a p-type impurity (aluminum) at a high concentration and undoped layers which are alternately stacked. Carriers in the δ-doped layers spread out extensively to the undoped layers. Because of a low impurity concentration in each of the undoped layers, scattering by impurity ions is reduced so that a low resistance and a high breakdown voltage are obtained.
REFERENCES:
patent: 5013685 (1991-05-01), Chiu et al.
patent: 5091759 (1992-02-01), Shih et al.
patent: 5284782 (1994-02-01), Jeong et al.
patent: 5324682 (1994-06-01), Tserng
patent: 5463978 (1995-11-01), Larkin et al.
patent: 5488237 (1996-01-01), Kuwata
patent: 5492857 (1996-02-01), Reedy et al.
patent: 6025613 (2000-02-01), Bito et al.
patent: 6057566 (2000-05-01), Eisenbeiser et al.
patent: 6258616 (2001-07-01), Cunningham et al.
patent: 6380569 (2002-04-01), Chang et al.
patent: 6483100 (2002-11-01), Williams et al.
patent: 6617653 (2003-09-01), Yokogawa et al.
patent: 6674131 (2004-01-01), Yokogawa et al.
patent: 2002/0008242 (2002-01-01), Hata
patent: 0 555 886 (1993-08-01), None
patent: 05013446 (1993-01-01), None
Wen-Chau et al.; “Application of δ-doped Wide-Gap Collector Structure for High-Breakdown and Low-Offset voltage Transistors”; American Institute of Physics; Sep. 7, 1998.
Asen Asenov et al.; “Suppression of Random Dopant-Induced Threshold Voltage Fluctuations in Sub-0.1 -μm MOSFET's with Epitaxial and δ-Doped Channels”; IEEE Transaction on Electron Devices; vol. 46, No. 8; Aug. 1999.
Kitabatake Makoto
Kusumoto Osamu
Takahashi Kunimasa
Uchida Masao
Yokogawa Toshiya
Harness & Dickey & Pierce P.L.C.
Matsushita Electric - Industrial Co., Ltd.
Nelms David
Nguyen Thinh T
LandOfFree
Equipment for communication system and semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Equipment for communication system and semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Equipment for communication system and semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3381445