Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1981-12-30
1984-10-30
Bernstein, Hiram H.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
C30B 1912
Patent
active
044798474
ABSTRACT:
A method for in situ growth of an array of single crystals from material deposited on an inert substrate is comprised of (1.0) preparing a surface of the substrate with a closely packed array of concavities which stably contain liquid material by the combined effects of surface tension and geometry, (2.0) depositing the material from which the crystals are to be grown on the prepared surface of the substrate to at least partially fill the concavities, (3.0) removing deposited material from the field by evaporation etching after the next step, and (4.0) crystallizing the material remaining in each concavity. The process may be followed by a further step (5.0) of recrystallizing the material to assure a single crystal in each concavity free of any defects, such as defects resulting from etching. Crystallization may be effected by isothermally heating the substrate at a liquid temperature of the deposited material and changing the composition of the deposited material, and deposited material may be removed from the field during the process of crystallizing the material. The concavities are preferably provided as densely packed polygons plasma etched with vertical walls.
REFERENCES:
patent: 4251299 (1981-02-01), Baliga
McCaldin, James O., et al. Stability and Pinning Points in _Substrate-Confined Liquids, J. Appl. Phys. 52(2), Feb. _1981, pp. 803-807.
Kuech, T. F., Confining Substrate for Micron-Thick Liquid Films, _Appl. Phys. Lett. 37(1), Jul. 1, 1980, pp. 44-46.
Lam, H. W., et al., Characteristics of Mosfets Fabricated in _Laser-Recrystallized Polysilicon Islands with a Retaining Wall _Structure on an Insulating Substrate, IEEE Electron Device Letters, _vol. EDL-1, No. 10, Oct., 1980, pp. 206-208.
Geis, M. W., et al., Silicon Graphoepitaxy Using a Strip-Heater _Oven, Appl. Phys. Lett. 37(5), Sep. 1, 1980, pp. 454-456.
Kylkov, V. I., Diataxial Growth of Silicon and Germanium, _Journal of Crystal Growth 52(1981), pp. 687-691.
Kuech Thomas F.
McCaldin James O.
Bernstein Hiram H.
California Institute of Technology
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