Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1993-09-03
1997-10-21
Ngo, Ngan V.
Static information storage and retrieval
Read/write circuit
Bad bit
36523003, 257315, 257529, 257659, 371 216, H01L 29788
Patent
active
056803532
ABSTRACT:
Electrically programmable memories, in particular EPROMs, generally have an internal signature which can be read by the memory-programming device. This internal signature indicates the origin of the part (manufacturer's identification) and the appropriate programming mode for the part (fast programming, "intelligent" programming, etc.). Here, it is proposed that this information be recorded in a UPROM (unerasable programmable read-only) memory, i.e., in practice an EPROM memory masked by a layer of aluminium which prevents its erasure by ultraviolet rays.
REFERENCES:
patent: 4055802 (1977-10-01), Panousis et al.
patent: 4217637 (1980-08-01), Faulkner
patent: 4759123 (1988-07-01), Ohta et al.
patent: 4942450 (1990-07-01), Iwashita
patent: 4998223 (1991-03-01), Akaoji
Kugler et al IBM Tech Discl. Bulletin, vol. 22, No. 5, Oct. 1979, pp. 1879-1880.
Conan Bertrand
Farrugia Augustin
Gaultier Jean-Marie
Anderson Matthew
Formby Betty
Groover Robert
Ngo Ngan V.
SGS-Thomson Microelectronics S.A.
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