EPROM in high density CMOS having added substrate diffusion

Details EPROM in high density CMOS having added substrate diffusion EPROM in high density CMOS having added substrate diffusion

1997-11-03

1999-10-19

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257317, 257321, 257390, 438257, 438261, 438264, 438265, 36518514, 36518515, H01L 29788

Patent

active

059693827

ABSTRACT:
A method of making an EPROM transistor in a high density CMOS integrated circuit having a substrate to gate electrode material capacitor. The EPROM transistor is made using only the steps used to make the other components of the high density CMOS integrated circuit. The EPROM transistor is programmable at low voltages which high density CMOS transistors can handle.

REFERENCES:
patent: 5014098 (1991-05-01), Schlais et al.

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