EPROM erasable by UV radiation having redundant circuit

Details EPROM erasable by UV radiation having redundant circuit EPROM erasable by UV radiation having redundant circuit

1991-03-28

1991-12-03

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 231, 357 59, 357 84, 357 85, 365 53, H01L 2968, H01L 2701, H01L 2900, H01L 2978

Patent

active

050703781

ABSTRACT:
A semiconductor device includes a shield layer selectively formed to cover, via an insulating film, source and drain regions, a control gate electrode, first and second conductive layers and parts of first, second and third polycrystalline silicon layers. The shield layer has a portion which is in contact with the semiconductor substrate and the third polycrystalline silicon layer to surround the source and drain regions, floating and control gate electrodes, the first and second conductive layers and the parts of the first and second polycrystalline silicon layers.

REFERENCES:
patent: 4758869 (1988-06-01), Eitan et al.
patent: 4805138 (1989-02-01), McElroy et al.
Sze, Semiconductor Devices; Physics & Technology, pp. 468-505, 1985.

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