EPROM cell with a readily scalable interpoly dielectric

Details EPROM cell with a readily scalable interpoly dielectric EPROM cell with a readily scalable interpoly dielectric

1995-06-01

1997-02-04

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257325, 257411, 36518501, H01L 29792

Patent

active

056001665

ABSTRACT:
The use of an O--N--RTN (Oxide-Nitride-Rapid Thermal Nitrided Polysilicon) interpoly dielectric multilayer instead of a customary O--N--O (Oxide-Nitride-Oxide) multilayer in the floating gate structure of a progammable, read-only memory cell has beneficial effects on the performance of the cell and facilitates its scaling.

REFERENCES:
patent: 4619034 (1986-10-01), Janning
patent: 4808261 (1989-02-01), Ghidini et al.
patent: 4996081 (1991-02-01), Ellul et al.
patent: 5032545 (1991-07-01), Doan et al.
patent: 5104819 (1992-04-01), Freiberger et al.
patent: 5304829 (1994-04-01), Mori et al.
patent: 5422291 (1995-06-01), Clementi et al.
Ajika et al., "Enhanced Reliability of Native Oxide Free Capacitor Dielectrics on Rapid Thermal Nitrided Polysilicon", 1989 VLSI Symposium, Technology Digest, 1989, pp. 63-64.
Lo et al., "Polarity Asymmetry of Electrical Characteristics of Thin Nitrided Polyoxides Prepared by In-Situ Multiple Rapid Thermal Processing", Solid State Electronics, vol. 34, No. 2, Feb. 1991, pp. 181-183.
Patent Abstracts of Japan, vol. 16, No. 67 (E-1168), 19 Feb. 1992.
Alvi et al., "Thin Oxide/Nitrided-Oxide Films on Polysilicon Grown by Rapid Transient Processing", Extended Abstracts, vol. 86-2, No. 377, 24 Oct. 1986, p. 565.
Ajika et al., "Formation of Inter-Poly Si Dielectrics by Rapid Thermal Processing", Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Aug. 27 1987, pp. 211-214.

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