Epoxy resin composition for encapsulating semiconductor...

Details Epoxy resin composition for encapsulating semiconductor... Epoxy resin composition for encapsulating semiconductor...

2011-03-01

2011-03-01

Feely, Michael J (Department: 1761)

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

With specified encapsulant

C257S789000, C257S795000, C523S466000, C525S524000

Reexamination Certificate

active

07898094

ABSTRACT:
An epoxy resin composition comprising: (A) an epoxy resin having at least three epoxy groups per molecule and an epoxy equivalent of 170 or lower; (B) an epoxy resin having a phenolic nucleus and two epoxy groups in such an amount that a weight ratio of the epoxy resin (B) to the epoxy resin (A) ranges from 35/65 to 65/35; (C) a phenolic curing agent in such an amount that a molar ratio of phenolic hydroxyl groups to the whole epoxy groups in the composition ranges from 0.5 to 1.5; and (D) an inorganic filler in an amount of from 86 to 92 wt %, based on a total weight of the composition. The composition provides encapsulated semiconductor devices much less warped than those encapsulated with a conventional composition.

REFERENCES:
patent: 5001174 (1991-03-01), Yanagisawa et al.
patent: 5064881 (1991-11-01), Togashi et al.
patent: 5494950 (1996-02-01), Asakage et al.
patent: 2002/0053302 (2002-05-01), Endo et al.
patent: 06-220168 (1994-08-01), None
patent: 3137202 (2000-12-01), None
patent: 3451104 (2003-07-01), None
patent: 3537859 (2004-03-01), None
patent: 3551281 (2004-05-01), None
patent: 2005-15689 (2005-01-01), None
Machine translation of JP 06-220168, provided by the JPO website (1994).

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