Epoxy resin composition and semiconductor device encapsulated th

Details Epoxy resin composition and semiconductor device encapsulated th Epoxy resin composition and semiconductor device encapsulated th

1997-08-28

1999-08-17

Jordan, Kimberly

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Encapsulating

523443, H01L 21302, H01L 21463, C08L 6300

Patent

active

059406887

ABSTRACT:
In an epoxy resin composition comprising an epoxy resin, a curing agent, and 80-90 wt % of a particulate inorganic filler, fine particles having a particle size of less than 3 .mu.m account for 10-40 wt % of the inorganic filler, and the inorganic filler has a specific surface area of less than 2.5 m.sup.2 /g as measured by a nitrogen adsorption BET method. The inorganic filler satisfies that when a blend of a bisphenol F type liquid epoxy resin having a viscosity of 30-45 poises at 25.degree. C. as measured by Gardner-Holdt method with 75 wt % of the inorganic filler is measured for viscosity at 25.degree. C. by means of an E type viscometer, the viscosity at a shear rate of 0.6 s.sub.-1 is less than 50,000 poises and the ratio of the viscosity at a shear rate of 0.6 s.sup.-1 to the viscosity at a share rate of 10 s.sup.-1 is less than 2.5/1. The epoxy resin composition has a low melt viscosity enough to mold on semiconductor devices without die pad and wire deformation.

REFERENCES:
Patent Abstracts of Japan, vol. 015, No. 425, Oct. 29, 1991 and JP 03 177450 A.

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