Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Patent
1995-03-24
1996-12-31
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
257639, 257649, 257703, 257789, 257795, H01L 2329
Patent
active
055897142
ABSTRACT:
Semiconductor devices are encapsulated in a thermosetting resin filled with aluminum nitride particles. The aluminum nitride particles have an outer layer of Al--O--N, into which is incorporated amorphous Si--O, which renders them hydrolytically stable. The aluminum nitride particles impart very high thermal conductivity to the cured resin. In addition, the cured resin has a CTE similar to that of the encapsulated semiconductor device, and has excellent dielectric properties.
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Crane Sara W.
Hardy David B.
The Dow Chemical Company
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