Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Compound semiconductor
Reexamination Certificate
2006-04-25
2006-04-25
Nadav, Ori (Department: 2811)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Compound semiconductor
C438S046000, C438S795000
Reexamination Certificate
active
07033961
ABSTRACT:
The present invention relates to an epitaxial structure having one or more structural epitaxial layers, including a gallium nitride (GaN) layer, which is deposited on a substrate, and a method of growing the epitaxial structure, wherein the structural epitaxial layers can be separated from the substrate. In general, a sacrificial epitaxial layer is deposited on the substrate between the substrate and the structural epitaxial layers, and the structural epitaxial layers are deposited on the sacrificial layer. After growth, the structural epitaxial layers are separated from the substrate by oxidizing the sacrificial layer. The structural epitaxial layers include a nucleation layer deposited on the sacrificial layer and a gallium nitride layer deposited on the nucleation layer. Optionally, the oxidation of the sacrificial layer may also oxidize the nucleation layer.
REFERENCES:
patent: 5608353 (1997-03-01), Pratt
patent: 5629648 (1997-05-01), Pratt
patent: 6384433 (2002-05-01), Barratt et al.
patent: 6387733 (2002-05-01), Holyoak et al.
patent: 6448793 (2002-09-01), Barratt et al.
patent: 6475916 (2002-11-01), Lee et al.
patent: 6560452 (2003-05-01), Shealy
patent: 6589877 (2003-07-01), Thakur
patent: 6608367 (2003-08-01), Gibson et al.
patent: 6621140 (2003-09-01), Gibson et al.
patent: 6627552 (2003-09-01), Nishio et al.
patent: 6633073 (2003-10-01), Rezvani et al.
patent: 6656271 (2003-12-01), Yonehara et al.
patent: 6657592 (2003-12-01), Dening et al.
patent: 6660606 (2003-12-01), Miyabayashi et al.
patent: 6748204 (2004-06-01), Razavi et al.
patent: 6750158 (2004-06-01), Ogawa et al.
patent: 6750482 (2004-06-01), Seaford et al.
patent: 2003/0160307 (2003-08-01), Gibson et al.
patent: 2003/0209730 (2003-11-01), Gibson et al.
Gibb Shawn
Grider David
Hosse Brook
Shealy Jeffrey B.
Smart Joseph
Nadav Ori
RF Micro Devices, Inc.
Withrow & Terranova , PLLC
LandOfFree
Epitaxy/substrate release layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Epitaxy/substrate release layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxy/substrate release layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3590842