Epitaxy reactor having an improved gas collector

Details Epitaxy reactor having an improved gas collector Epitaxy reactor having an improved gas collector

1989-09-26

1990-12-11

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Chamber seal

118715, 118725, C23C 2600

Patent

active

049762176

ABSTRACT:
An epitaxy reactor of the type having a planetary platform for semiconductor wafers. At the periphery of this planetary support (4), a baffle plate (17) for gas distribution is disposed, which is provided with regularly distributed holes (12).
According to the invention, this baffle plate comprises two cylinders or quasi cylinders, i.e. an upper cylinder (17) and a lower cylinder (3) sliding one into the other and forming parts of the same conduit having the form of a passage (16) surrounding the platform, the other parts (18) of this conduit acting as a spring, which tends to cause the upper cylinder (17) to rise with respect to the lower cylinder (3) bearing on the platform.

REFERENCES:
patent: 4607591 (1986-08-01), Stitz

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