Epitaxial wafer for use in the production of an infrared LED

Details Epitaxial wafer for use in the production of an infrared LED Epitaxial wafer for use in the production of an infrared LED

1983-12-27

1986-03-11

Davie, James W.

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 61, 357 63, 372 45, H01L 3300, H01S 319

Patent

active

045757429

ABSTRACT:
The present invention relates to a wafer for use in the production of an infrared LED. Conventionally, infrared LEDs are produced by using an epitaxial wafer comprising P- and N-type GaAs epitaxial layers. The wafer according to the present invention is characterized by having a P-type Ga.sub.1-x Al.sub.x As epitaxial layer and improves the output power of infrared LEDs. The epitaxial layers according to the present invention are (1) a 20-100 .mu.m thick N-type GaAs epitaxial layer consisting of N-type GaAs doped with Si and having a carrier concentration in the range of from 1.0.times.10.sup.17.cm.sup.-3 to 2.0.times.10.sup.18.cm.sup.-3, (2) a 10-80 .mu.m thick P-type GaAs epitaxial layer consisting of P-type GaAs doped with Si and having a carrier concentration in the range of from 1.0.times.10.sup.17.cm.sup.-3 to 5.0.times.10.sup.18.cm.sup.-3, and (3) a 5-90 .mu.m thick mixed crystal layer consisting of P-type Ga.sub.1-x Al.sub.x As mixed crystal and having a carrier concentration of from 1.0.times.10.sup.17.cm.sup.-3 to 5.0.times.10.sup.18.cm.sup.- 3, the mixed crystal ratio of Ga.sub.1-x Al.sub.x As being in the range of from 0.03 to 0.8 at least in a region of the mixed crystal layer, which is at least 2 .mu.m thick when measured from the interface between the mixed crystal layer and the P-type GaAs epitaxial layer.

REFERENCES:
patent: 4008485 (1977-02-01), Miyoshi et al.
patent: 4477824 (1984-10-01), Dutt
Heinen, J. et al., Proton Bombarded GaAlAs:GaAs Light Emitting Diodes, IEEE Transactions on Electron Devices, Oct. 1976, p. 1186.
Tsarenkov et al., Red Light Emitting Diodes Based on Variable-Gap Ga.sub.1-x Al.sub.x As:Si p-n Structures, Soviet Physics-Semiconductors, vol. 6, No. 5, (Nov. 1972).
Sato, T. et al., Si Doped Infrared Light Emitting Diodes, National Technical Report, vol. 18 No. 3, Jun. 1972, Matsushita.
Kressel et al., Close Confinement Gallium Aresinide PN Junction Lasers With Rduced Optical Loss at Room Temperature, RCA Review, Mar. 1969, pp. 106-113.
Panish, M., Heterostructure Injection Lasers, Bell Laboratories Record, Nov. 1971, pp. 298-304.

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