Epitaxial wafer and method of fabricating thereof

Details Epitaxial wafer and method of fabricating thereof Epitaxial wafer and method of fabricating thereof

1996-06-27

1997-10-21

Lam, Cathy F.

Stock material or miscellaneous articles

Composite

Of inorganic material

428446, 428219, 117904, 117932, 423348, 257352, 257617, B32B 900, B32B 904, C30B 2906, C01B 3302

Patent

active

056794762

ABSTRACT:
An epitaxial wafer capable of removing impurities and oxide layers thereon having a high dielectric strength is disclosed. A substrate wafer 1 in which laser-scattering centers have a density of higher than 5.times.10.sup.6 /cm.sup.3 is provided. An epitaxial layer 3 is formed by epitaxial growth on a completely clean surface of the substrate. The surface of the epitaxial layer consists of a non-defect layer which is provided for device active regions. Moreover, a high density of laser-scattering centers are distributed near the interface of the epitaxial layer and the substrate wafer and the interior of the substrate, thus providing for a wafer capable of removing impurities.

REFERENCES:
patent: 3664867 (1972-05-01), Galli et al.
patent: 4323417 (1982-04-01), Lam
patent: 4498951 (1985-02-01), Tamura et al.
patent: 5264296 (1993-11-01), Doll et al.
patent: 5320907 (1994-06-01), Sato
patent: 5387459 (1995-02-01), Hung
patent: 5492752 (1996-02-01), Parsons et al.
patent: 5506433 (1996-04-01), Ohori et al.

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