Epitaxial wafer and method for manufacturing method

Details Epitaxial wafer and method for manufacturing method Epitaxial wafer and method for manufacturing method

2007-10-30

2007-10-30

Menz, Douglas M. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material with...

C257S609000, C438S481000

Reexamination Certificate

active

10488335

ABSTRACT:
It is an object of the present invention to provide an epitaxial wafer with fewer pit defects in the epitaxial layer of a silicon monocrystalline wafer that has been doped with arsenic. Pit defects tend to occur when gas etching is performed prior to epitaxial film formation, but this tendency is reversed and a sound epitaxial layer is obtained by setting the crystal plane orientation to (100) and specifying the range of the tilt angle for the angle θ in the [001] direction or [001] direction or the angle φ in the [010] direction or [010] direction with respect to the [100] axis.

REFERENCES:
patent: 4987472 (1991-01-01), Endo et al.
patent: 6630024 (2003-10-01), Schmolke et al.
patent: 6743495 (2004-06-01), Vasat et al.
patent: 62-226891 (1987-10-01), None
patent: 2000-100737 (2000-04-01), None
Patent Abstracts of Japan for JP62-226891 published on Oct. 5, 1987.
Patent Abstracts of Japan for JP2000-100737 published on Apr. 7, 2000.

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