Epitaxial source/drain transistor

Details Epitaxial source/drain transistor Epitaxial source/drain transistor

2008-06-11

2011-10-18

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21125

Reexamination Certificate

active

08039901

ABSTRACT:
A semiconductor device includes a gate electrode disposed on a semiconductor substrate and source/drain regions disposed at both sides of the gate electrode, the source/drain regions being formed by implanting impurities. The source/drain regions include an epitaxial layer formed by epitaxially growing a semiconductor material having a different lattice constant from that of the semiconductor substrate in a recessed position at a side of the gate electrode, and a diffusion layer disposed in a surface layer of the semiconductor substrate.

REFERENCES:
patent: 7166897 (2007-01-01), Orlowski et al.
patent: 2005/0184345 (2005-08-01), Lin
patent: 2008/0054250 (2008-03-01), Chuang et al.
patent: 2006-165012 (2006-06-01), None
Kah Wee Ang et al.; Enhanced Performance in 50 nm N-MOSFETs with Silicon-Carbon Source/Drain Regions; Dec. 2004; IEDM Tech Dig.; pp. 1069-1071.

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